GaN Single Crystals Grown by High Pressure Solution Method.

Single crystals of superconducting SmFeAsO1−xFy grown at high pressure

Single crystals of SmFeAsO1−xFy of a size up to 120 × 100 μm2 have been grown from NaCl/KCl flux at a pressure of 30 kbar and temperature of 1350–1450 ◦C using the cubic anvil high-pressure technique. The superconducting transition temperature of the obtained single crystals varies between 45 and 53 K. Obtained crystals are characterized by a full diamagnetic response in low magnetic fields and...

Efficient Incorporation of Mg in Solution Grown GaN Crystals

Detailed spectrometry and optical spectroscopy studies carried out on GaN crystals grown in solution detect and identify Mg as the dominant shallow acceptor. Selective etching of crystals with higher Mg levels than that of the donor concentration background indicates that Mg acceptors incorporate preferentially in the N-polar face. Electrical transport measurements verified an efficient incorpo...

Optical probing of low-pressure solution grown GaN crystal properties

The structural and optical properties of self-nucleated crystals grown by a near atmospheric pressure solution growth method are presented. High-resolution room temperature Raman scattering studies demonstrate that stress-free crystals with low free-electron background have been produced. Low and room temperature photoluminescence experiments confirm the presence of shallow donors and an unknow...

Solution-Grown CsPbBr3 Perovskite Single Crystals for Photon Detection

Annealing-induced periodic patterns in solution grown polymer single crystals

Institute of Physics, University of Freiburg, 7 [email protected] Hermann Staudinger Graduate School, U Germany School of Materials Science & Engineering, Z People's Republic of China Chair of Chemical Materials Science, D Konstanz, 78464 Konstanz, Germany Institute of Macromolecular Chemistry, U Germany Freiburg Materials Research Centre, Univers † Electronic supplementary informa ...